Abstract
A RECENT report by E. H. Cooke-Yarborough et al. 1, of the Atomic Energy Research Establishment, Harwell, indicated that the minority carrier storage effects in transistors of the point-contact type were reduced by neutron bombardments. This led me to investigate the effects of irradiation upon diodes of the silicon junction type, with the object of reduction of minority carrier storage in these. The diodes used in the experiment were the small power type of 50 mW. dissipation which are at present commercially available.
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References
Cooke-Yarborough, E. H., Florida, C. D., and Stephen, J. H., Proc. Inst. Elect. Eng., 101, Part III, No. 73 (1954). Florida, C. D., Holt, F. R., and Stephen, J. H., Nature, 173, 397 (1954).
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GORTON, R. Effects of Irradiation upon Diodes of the Silicon Junction Type. Nature 179, 864 (1957). https://doi.org/10.1038/179864a0
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DOI: https://doi.org/10.1038/179864a0
