Figure 4
From: Alterations of DNA damage-response genes ATM and ATR in pyothorax-associated lymphoma
Induction and repair of DNA DSBs after IR exposure determined by PFGE. (a) Ethidium bromide-stained gel after PFGE. Equal numbers of OPL-7, IB4, OPL-2, Pal-1, and AT(L)5KY cells were embedded in 0.8% agarose plugs and exposed to 20 Gy IR. Cells were allowed to repair DSBs for 0–6 h at 37°C, then lysed to extracted DNA and subjected to PFGE. Untreated control is shown in the first lane. The upper bands derived from undamaged DNA or repaired DNA in wells. The lower bands show the compression zones (C.Zs) consisting of DSBs DNA. (b) Quantitation of DSB repair assays was performed. The percentage of unrepaired DSBs was calculated by ratio of signal from DSBs DNA in the C.Zs to DNA in the corresponding well. The percentage of unrepaired DSBs at 0-h incubation was set at 100%. Repair of DNA DSBs after IR exposure was delayed in OPL-2 and Pal-1 compared to control cell lines OPL-7 and IB4. The means (symbol) and standard deviation (error bar) from three experiments is depicted. Symbols represent cell lines: OPL-2 (•), Pal-1 (▪), OPL-7 (○), IB4 (▴), AT(L)5KY (×).
