Figure 8
Conceptual sketch of a possible MERAM element. The binary information is stored by the magnetization direction (thick white arrows) of the bottom ferromagnetic layer (blue), is read by the resistance of the magnetic trilayer (Rp when the magnetizations of the two ferromagnetic layers are parallel), and is written by applying a voltage (V) across the multiferroic ferroelectric–antiferromagnetic layer (FE-AFM; green). If the magnetization of the bottom ferromagnetic layer is coupled to the spins in the multiferroic (small white arrows), and if the ME coupling is sufficiently strong, reversing the ferroelectric polarization (P) in the multiferroic changes the magnetic configuration in the trilayer from parallel to antiparallel, and the resistance from Rp to antiparallel (Rap). This process achieves a hysteretic dependence of device resistance on voltage. Adapted from Ref. 76, reproduced with permission (© 2008 M. Bibes).
