Figure 1 | NPG Asia Materials

Figure 1

From: Realizing a SnO2-based ultraviolet light-emitting diode via breaking the dipole-forbidden rule

Figure 1

Conceptual illustration of breaking of the dipole-forbidden transition rule in SnO2 surfaces and nanocrystals. (a) Band structure and the corresponding optical absorption spectra of bulk SnO2 calculated using generalized gradient approximation. (b) Crystal structure (left), partial charge density mappings of valence-band maximum (VBM) (middle) and conduction-band minimum (CBM) (right) of the SnO2 (101) surface. (c) Band structure and the corresponding optical absorption spectrum of the SnO2 (101) surface. (d) Partial charge densities of lowest unoccupied molecular orbital (left) and highest occupied molecular orbital (right) of a quantum dot (QD) with diameter of 1.5 nm. (e) Energy levels and the corresponding optical absorption spectrum of SnO2 QD. For the ideal bulk SnO2 with infinite dimensions, the absence of optical transition between VBM and CBM (corresponding to the fundamental bandgap) indicates that the band-edge light emission is dipole forbidden as a result of the symmetry of the band-edge wavefunctions. For the (101) surface and the QD with defects, the fundamental bandgap becomes dipole transition allowed, so the optical gap is largely reduced. As a consequence, the dipole-forbidden transition rule breaks down in SnO2 surfaces and QDs.

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