Table 3 Key field-emission performance parameters of some nanostructure field emitters reported in the literature and in this work
Materials | Turn-on field (V μm−1) | Threshold field (V μm−1) | Field enhancement factor (β) | Stability: testing time and fluctuation | Reference |
|---|---|---|---|---|---|
Carbon nanotube arrays | — | 2.7–3.3 | — | 20 h, − | |
ZnO nanowire arrays | 5.6 | 9.3 | 1397 | — | |
WO3 nanostructures | 6.2 | — | 1480 | — | |
SnO2 nanostructures | 3.5 | 4.65 | 1225 | 40 h, − | |
ZnS nanowires | 5.5–11.67 | — | 1942–891 | 8 h, − | |
CdS nanowires | 8.95 | 10.39 | 388 | 1000 min, − | |
SiC nanotubular | 5 | 10 | — | — | |
GaN nanocolumns | 2.5 | 4.7 | — | 1 h, <7.4% | |
B nanowires | 5.1 | — | — | — | |
W nanowire arrays | 4.0 | — | 1904 | 6 h, <3.6% | |
LaB6 nanorods | 4.62 | — | 405 | 10 h, <10% | |
CeB6 nanorods | 9.5 at 0.1 μA cm−2 | — | 1035–1165 | 2.2 h, <10% | |
Aligned LaB6 nanowire arrays | 1.82 | 2.48 | 1072 | 1000 min, <6.0% | This work |
