Figure 7
From: Architectured van der Waals epitaxy of ZnO nanostructures on hexagonal BN
UV photosensor of a ZnO nanowall/hBN. (a) Schematics of the ZnO nanowall network/hBN photoconductor device with three different electrode configurations. (b) I–V characteristic curves for three different device configurations of the ZnO nanowall networks, the ZnO nanowall–hBN heterojunction, and the bare hBN layer measured in dark room conditions. Inset shows the I–V curves of the ZnO nanowall–hBN heterojunction (black solid line) and the bare hBN layer (red solid line). (c) Photoresponse characteristics measured at bias voltage of 1.0 V under alternate on/off cycles. Black and red solid lines are the photoresponse characteristics of ZnO nanowall–hBN heterojunction and the bare hBN layer, respectively.
