Figure 2

TEM, ED, AFM and SEM characterization of quasi-sc CdTe nanosheets and nanobelts. (a) LRTEM image and ED patterns of selected areas (red circles, a, b, d) of a one micrometer-sized CdTe nanosheet; c is the FFT pattern of the HRTEM image. In a and c, the circled strongest spots could be indexed as the {220} reflections; the outer triangled spots with weak intensity could be assigned to the {422} reflections; and the inner boxed spots corresponded to the formally forbidden 1/3{422} reflections. (b) TEM image and ED patterns of selected areas (black circles, a, b, c) of a CdTe nanobelt. (c, d) SEM images of a CdTe nanobelt and a CdTe nanosheet, respectively. (e, f) 3D and 2D representations of a CdTe nanosheet and a CdTe nanobelt on ITO conductive glass substrates measured by AFM. (g) SEM image of CdTe nanosheets in a high yield. (h) I-V curves of a CdTe nanobelt on silicon wafer by inserted CP-AFM measurement. Eight positions on the nanobelt were contacted with AFM tip to obtain I-V curves.