Figure 7 | NPG Asia Materials

Figure 7

From: Oriented attachment of nanoparticles to form micrometer-sized nanosheets/nanobelts by topotactic reaction on rigid/flexible substrates with improved electronic properties

Figure 7

(a) Hall voltage sensitivity, ΔVH (T, B)/VH(T, 0), of c-Ag2-δTe nanosheet film to magnetic field at room temperature. Inset, digital photograph of Hall effect device, where the white lines highlight the square measurement area. (b) Field dependence of Hall resistance at room temperature. Inset, the correlation coefficient R and slope of linear variation and the calculated electronic parameters, Hall coefficient RH, carrier concentration n and carrier mobility μ. (c) Resistance versus temperature for c-Ag2-δTe nanosheet film. The inset shows a digital image of the five-electrode Hall bar for transport measurement. (d) Magnetoresistance of c-Ag2-δTe nanosheet film in perpendicular magnetic field under different low temperatures (2–150 K).

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