Figure 2
From: Diffusion-driven currents in organic-semiconductor diodes
Experimental J–V characteristics (symbols) of a 43-nm super-yellow poly(p-phenylene vinylene) (SY) OLED and the corresponding calculations (solid line) from a drift-diffusion model, using Cn=Cp=2 × 10−18m3s−1 and Nt=5 × 1022m−3, with a trap depth of 0.5 eV. The inset shows the differential plot of the data and simulation according to Equation (3). The leakage (1), diffusion (2) and drift (3) regimes are indicated.
