Figure 3
From: Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films
Temperature- and gate-dependent Hall resistance Rxy of ~50-nm-thick Cd3As2 thin film. (a) Rxy under −0.5 V (gate voltage), indicative of electron-dominated n-type conductivity. (b) Rxy under −0.6 V, showing a nonlinear behavior originated from two-carrier transport owing to the gate-induced holes. (c) Rxy under −0.9 V. The Cd3As2 channel undergoes a transition from electron- to hole-dominated transport as evidenced by the change of slope at B⩾3 T. (d) Rxy under −2.2 V. The holes are dominant in Hall resistance. (e) Gate-dependent sheet carrier density. It implies the ambipolar transport. The hole carrier density was extracted from the fits to the two-carrier transport model. Electron carrier density was obtained from the Hall effect measurements. The graduated background represents the amount and type of carriers, blue for holes and red for electrons. (f) Temperature-dependent conductance ratio σn/σp. The dashed line marks σn/σp=1. (g) The Kohler’s plots of the MR curves at the gate voltage of −0.9 V. The non-overlapping behavior with the non-linear Hall data suggests unambiguously two-carrier transport.
