Figure 4
From: Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films
SdH oscillations of Cd3As2 thin films. (a) Gate-dependent SdH oscillations at 4 K. The amplitude decreases as the gate voltage increases. Also, the critical magnetic field that the oscillations start shifts toward the higher field with higher gate voltage. (b) Temperature-dependent SdH oscillations at 0 V. (c) Landau level index n with respect to 1/B under different gate voltages. Integer indices denote the ΔRxx peak positions in 1/B and half integer indices represent the ΔRxx valley positions. The intercepts are close to 0.5. (d) Temperature-dependent amplitude of SdH oscillations under different gate voltages. With the best fit, the effective mass was obtained. (e) Effective mass and quantum lifetime as a function of carrier density obtained from the Hall effect measurements. The effective mass slightly increases with increasing carrier density while the quantum lifetime shows the opposite trend.
