Figure 1 | NPG Asia Materials

Figure 1

From: Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM

Figure 1

Cross-sectional transmission electron microscope sample of a vertical phase-change random access memory cell prepared for in situ switching. The W plug connected to the TiN heater (highlighted in red) is grounded through attachment to the Cu support grid. A Pt–Ir tip makes electrical contact with the W top electrode contact, constructing an electrical circuit for the application of DC voltage. The TiN heater is surrounded by a thermal/electrical insulator (Si3N4, highlighted in yellow). The active switching volume (hemispherical volume) is outlined by a white dotted line.

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