Figure 3 | NPG Asia Materials

Figure 3

From: Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM

Figure 3

Change of the cell resistance and microstructure of a phase-change random access memory cell during DC set switching in transmission electron microscope. Note that the Ge–Sb–Te matrix surrounding the active switching volume is subject to structural changes while the switching volume undergoes set switching by an amorphous-to-crystalline phase transition. The cell resistance was changed by approximately three orders of magnitude as a result of set switching. The active switching volume is outlined by a white dotted line.

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