Figure 5 | NPG Asia Materials

Figure 5

From: Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM

Figure 5

I–V characteristics and correlated microstructural evolutions of cell A. (a) I–V curve plotted in log-scale. The I–V curve is divided into three regimes: amorphous-off (0–1.15 V); threshold switching (1.15–1.4 V); and memory switching (1.4–1.5 V). (b) Detailed view of the threshold and memory-switching regimes outlined by a blue dotted line in (a). (c–g) transmission electron microscopy images corresponding to the points indicated in (b). The microstructure of the active switching volume remained nearly the same as that of the initial state until the voltage increased to 1.4 V, at which memory switching occurs with the appearance of a crystalline phase. The crystalline phase appears as nano-particles in the active switching volume and in the matrix.

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