Figure 6 | NPG Asia Materials

Figure 6

From: Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM

Figure 6

High-resolution transmission electron microscopy image of the crystalline phase. (a) High-resolution transmission electron microscopy image of the Ge–Sb–Te matrix of cell A containing the nucleated crystalline phase after DC set switching. The crystalline phase (indicated by region b) is embedded as nanoparticles in the matrix (region c). (b) Enlarged high-resolution transmission electron microscopy image of region b and the corresponding fast Fourier transformation pattern. The measured d-spacing of ~0.30 nm coincides with that of the Ge–Sb–Te (200) plane. (c) Enlarged high-resolution transmission electron microscope image of region c and the corresponding fast Fourier transformation pattern showing relatively low crystallinity.

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