Figure 8 | NPG Asia Materials

Figure 8

From: Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM

Figure 8

Growth of the crystalline Ge–Sb–Te phase during memory switching. The size of the crystalline Ge–Sb–Te phase was measured and plotted as a function of DC voltage in (a) cell A and (b) cell B. The size of the smallest detectable crystal by transmission electron microscopy was ~6 nm. In cell A, the crystalline phase was also formed outside the active switching volume. The onset voltage of memory switching was different in the two cells, i.e., 1.4 V in cell A and 0.97 V in cell B. The interface offset distance of the crystalline phase formed within the active switching volume was measured by intensity profiling of the transmission electron microscopy images to be ~6 and ~8 nm for cells A and B, respectively.

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