Figure 9 | NPG Asia Materials

Figure 9

From: Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM

Figure 9

A model proposed for the failure of phase-change random access memory by two-step void formation. (a) Melting of Ge–Sb–Te in the active switching volume encompassed by a high-crystalline Ge–Sb–Te. (b) Mass redistribution in the Ge–Sb–Te melt driven primarily by electrostatic forces, which results in phase separation. Among the constituent elements, Sb ions migrate toward the bottom electrode contact (BEC) much faster than the other ions. (c) Formation of a Sb-rich phase near the BEC. (d) First void formation at the central region (corresponding to the hottest spot) by the preferential evaporation of the Sb-rich phase. (e) Second void formation of the remaining Ge–Sb–Te melt leading to complete mass loss of the switching volume.

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