Figure 4

J–V characteristics of the (a) PF₁₄-b-Piso₁₀-, (b) PF₁₄-b-Piso₂₀-, (c) PF₁₄-b-Piso₆₀- and (d) PF₁₄-b-Piso₁₀₀-based memory devices on ITO substrates. The block copolymer active layer was thermally annealed at 100 °C for 2 h. ITO, indium tin oxide; PF, poly[2,7-(9,9-dihexylfluorene)]; Piso, poly(pendent isoindigo).