Figure 6 | NPG Asia Materials

Figure 6

From: High-performance stretchable resistive memories using donor–acceptor block copolymers with fluorene rods and pendent isoindigo coils

Figure 6

Proposed resistive switching charge transfer effect of the studied memory device with (a) high-PF/Piso (PF14-b-Piso10) and (b) low-PF/Piso ratio (PF14-b-Piso100). Experimental and fitted J–V characteristics of the ON and OFF states for (c) PF14-b-Piso10- and (d) PF14-b-Piso100-based memory devices. ITO, indium tin oxide; PF, poly[2,7-(9,9-dihexylfluorene)]; Piso, poly(pendent isoindigo); SCLC, space-charge-limited-conduction.

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