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Figure 1

From: Attaining high mid-temperature performance in (Bi,Sb)2Te3 thermoelectric materials via synergistic optimization

Figure 1

High zT for mid-temperature power generation via synergistically implementing point defects, hot deformation (HD) and Indium (In) doping. (a) A schematic illustration showing the increased number of vacancies and decreased number of antisite defects after In doping and HD. (b) A schematic showing the increased band gap after In doping. The shift of the band edge is for illustration purpose only. (c) A schematic illustration showing the multiscale microstructures after HD and (d) a comparison of the zT values of zone-melted (ZM) Bi0.3Sb1.7Te3, ZM Bi0.3Sb1.625In0.075Te3 and HD Bi0.3Sb1.625In0.075Te3.

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