Figure 1 | NPG Asia Materials

Figure 1

From: All-nanocellulose nonvolatile resistive memory

Figure 1

Structural information of a nanopaper memory device. (a) Schematic illustration of the constituent material of a nanopaper memory device. The nanopaper was made of softwood chips, and the field emission scanning electron microscopy (FESEM) image shows the surface morphology of the nanopaper substrate. The nanopaper memory device consists of 99.3 vol.% nanocellulose. (b) Photograph of the nanopaper memory device. (c) Atomic force microscopy (AFM) image of the resistive-switching layer deposited onto an indium tin oxide (ITO)/nanopaper substrate. The thickness of the resistive-switching layer is ca. 100 nm. (d) Absorption spectra of the nanopaper substrate and resistive-switching layer/ITO/nanopaper substrate. No significant change in transmittance was observed after the deposition of the ITO electrode and the resistive-switching layer.

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