Figure 3
Examination of resistive switching using a single cellulose nanofiber. (a) Schematic illustration of the single cellulose nanofiber measurement system. To obtain the single cellulose nanofiber, the solution, created by the dilution of a 0.02 wt% cellulose nanofiber aqueous suspension 1:1000 with deionized (DI) water, was dropped onto the Ag-coated silicon substrate. The characterization of the resistive switching for the single cellulose nanofiber was performed by conductive-atomic force microscopy (C-AFM) with a Pt-coated Si cantilever. (b) Topographic AFM image of cellulose nanofibers on Ag/Si substrate. The nanocellulose was raveled out to the single nanofiber level. (c) The current–voltage (I–V) curves taken from a single cellulose nanofiber. The measurement was performed in atmospheric air conditions at room temperature. For the measurement, the voltage was applied to the Ag bottom electrode, and the Pt-coated cantilever was grounded. Similar to the resistive switching in the nanopaper memory, reversible resistive switching was seen in the single cellulose nanofiber. Similar switching characteristics were obtained after the 10th and 20th switching cycles. (d) Topographic AFM images of cellulose nanofiber before and after switching. Before the observation, the resistance switching was continued until the switching events diminished.
