Figure 3
Growth behavior of h-BN film on Ni(111) using APCVD. (a) Thickness of h-BN films grown at different ammonia-borane sublimation temperatures. Insets are optical microscope images of the film on SiO2/Si substrates. Scale bar, 50 μm. (b) SAED pattern of h-BN films with ammonia-borane sublimation temperatures of 95 °C and 100 °C. (c) Optical microscope images of h-BN films with different cooling rates. Insets are corresponding SAED patterns of the h-BN films. Scale bar, 5 nm−1 (d) High saturation optical microscope images of h-BN films transferred onto SiO2/Si substrates with different growth times. APCVD, atmospheric pressure chemical vapor deposition; h-BN, hexagonal boron nitride; SAED, selective area electron diffraction.
