Table 1 Electrical parameters of the undoped and doped devices fabricated through the homogeneous dewetting method
From: Homogeneous dewetting on large-scale microdroplet arrays for solution-processed electronics
Dopants | Maximum sat. mobility (cm2V−1s−1) | Average sat. mobility (cm2V−1s−1) | Threshold voltage (V) | Subthreshold slope (V/dec) | Log (Ion/Ioff) | Contact resistance (k Ωcm) a |
|---|---|---|---|---|---|---|
Non | 9.2 | 3.4±1.7 | 3.4±1.6 | 0.45±0.21 | 8.78±0.43 | 14.9 |
MoO3 | 13.1 | 5.5±2.8 | 1.7±0.7 | 0.35±0.13 | 8.05±0.35 | 3.8 |
V2O5 | 11.6 | 6.1±2.5 | 2.0±1.1 | 0.90±0.47 | 7.92±0.28 | 7.7 |
WO3 | 10.0 | 4.4±1.9 | 0.7±0.2 | 0.56±0.28 | 7.85±0.33 | 13.2 |
