Figure 6
From: Energy transfer in plasmonic photocatalytic composites
(a) The hot electrons can transport only through the small bottom interface when the PNP is atop the semiconductor (upper); the interface area through which the hot electrons can transfer into the semiconductor is significantly increased when the PNP is partially embedded into the semiconductor (lower). (b) The Fermi levels relative to the conduction band of TiO2 for stoichiometric (upper) and fully reduced (lower) Pt/TiO2 interfaces. (c) The band bending induced by replacing O with Au atoms at the interface, which further increases the interface SB. Figure reproduced with permission: b, Ref. 95, © 2009 APS; c, Ref. 91, © 2014 ACS.
