Figure 1
From: Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials
Nonlinear plasmonic semiconductor metamaterial. (a) Schematic view of InAs disk array on semi-insulating GaAs. (b) SEM image of the fabricated PSMM: InAs film thickness: 2 μm, SI-GaAs substrate thickness=500 μm, disk diameter D=70 μm, periodicity P=100 μm. (c), Band diagram of InAs showing potential inter- and intra-band transitions triggered by high THz fields (for example, ballistic acceleration, impact ionization and intervalley scattering). Abbreviation: SEM, scanning electron microscope.
