Figure 1: Characterization of synthesized Cd3As2 nanowires.
From: Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires
(a) SEM image of the nanowires. Scale bar, 10 μm. (b) TEM image of a nanowire with diameter ∼100 nm. Scale bar, 50 nm. (c) High-resolution TEM image of a nanowire. The 0.73 nm interplanar spacing indicates the [112] growth direction. Scale bar, 5 nm. (d) The energy-dispersive X-ray spectroscopy spectrum of the nanowire. The atomic ratio of Cd and As is approximately 3:2. (e) Temperature dependence of resistivity of a nanowire device with diameter ∼200 nm (Sample 1), showing semiconducting-like behaviour. The resistivity reaches maximum at around 26 K. Inset: schematic of the nanowire device with four-probe measurement configuration. The Si substrate is used as the back gate electrode. (f) MR of the nanowire device measured at 1.5 K whilst varying the magnetic field from B⊥E (θ=0°) to B//E (θ=90°). Inset: schematic of the relative orientations of B and E. The applied constant current is along the nanowire [112] direction, and the magnetic field is applied in the plane defined by the nanowire direction and the vector normal to the substrate. θ is an angle between B and normal direction of the substrate.
