Figure 3: Gate-tunable transport properties with B//E of a nanowire with diameter ∼100 nm.
From: Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires
(a) Transfer curves under different magnetic fields at 5 K and (b) the magnifications near the Dirac points for B≥8 T for Sample 2. Notable and repeatable peaks and valleys in the transfer curves are observed near the Dirac point under strong magnetic field due to splitting of the lowest Landau level. The resistance valleys are indicated by arrows. (c) Transfer curves under different magnetic fields at 75 K. No peaks and valleys in resistance are observed due to the thermal broadening of Landau level. (d) The MR(10 T)=[R(10 T)−R(0 T)]/R(0 T), obtained from the transfer curves under 0 and 10 T at 75 K, manifests a positive to negative transition as the gate voltage is tuned. (e,f) The MR curves measured at different gate voltages and at temperatures of 75 and 100 K, respectively.
