Figure 4: Gate-tunable-negative MR.
From: Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires
(a) Resistance as a function of magnetic field at 60 K and at different gate voltages. The gate voltage is applied up to 70 V to enhance the carrier density largely. The magnitude of negative MR reduces with increasing gate voltage. (b) The critical magnetic field BC as a function of gate voltage Vg. The modulation of Fermi level away from the Dirac point gives rise to the increase of BC.
