Figure 2: Energy band dispersion measured by ARPES.
From: Large Rashba spin splitting of a metallic surface-state band on a semiconductor surface
(a) Experimental energy band dispersions along 
1
12 of the 
surface Brillouin zone (SBZ) at 30 K and room temperature are shown in the left and right panels, respectively. The dashed line indicates the upper edge of the projected bulk bands of Ge(111). (b) Fermi surface map. The bold dashed (red) rectangle shows the region actually measured. The rest of the image was obtained by mirror symmetry operations. Bold and thin solid lines denote 
and (1×1) SBZs, respectively. (c) Momentum splitting Δk||, multiplied by 
2/2m*, for S1 in the M1 (diamonds) and M2 (crosses) sides as a function of binding energy.
