Figure 1: Epitaxial ferroelectric films on silicon. | Nature Communications

Figure 1: Epitaxial ferroelectric films on silicon.

From: Single crystal functional oxides on silicon

Figure 1

(a) Transfer process. Epitaxial thin films (one unit cell −100 nm) of ferroelectric oxides are grown on lattice-matched substrates with a thin (10–20 nm) sacrificial layer using pulsed laser deposition method. The stack is then immersed in a diluted KI+HCl solution, which isotropically etches La0.7Sr0.3MnO3. A polymethyl methacrylate handle is used to transfer the released ferroelectric layers onto Si and other substrates. Transmission electron microscopy images of the transferred (b) Pb(Zr0.2Ti0.8)O3, (c) (CaTiO3/SrTiO3)6 superlattices and (d) SrRuO3/BiFeO3/CoFeB/Pt multilayers on Si substrate. The scale bars are 5 nm in b,c and 40 nm in d.

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