Figure 4: Single-crystal Pb(Zr0.2Ti0.8)O3 (PZT) gated silicon channel transistor. | Nature Communications

Figure 4: Single-crystal Pb(Zr0.2Ti0.8)O3 (PZT) gated silicon channel transistor.

From: Single crystal functional oxides on silicon

Figure 4

(a) Frequency-dependent capacitance of Si/SiO2 and Si/SiO2/transferred Pb(Zr0.2Ti0.8)O3. The capacitor size is 22 × 22 μm2. (b) Cross-sectional schematic diagram of the fabricated transistor on SOI substrate. The length, L, and width, W, of the silicon channel region are 5 and 10 μm, respectively, whereas gate electrode length is 20 μm. (c) ID−VG (top gate) characteristics of the ferroelectric PZT-gated transistor at VG (back gate)=0. The counter-clockwise hysteresis and two order of abrupt current change in the ID−VG characteristics demonstrates the control of the channel charge by the polarization of the transferred PZT layer.

Back to article page