Figure 1: Transistor architecture and characteristics.
(a) Top-view optical image of a diffusion-driven organic field-effect transistor (DOFET) fabricated on plastic foil OSC is the organic semiconductor. Scale bar, 5 μm. (b) DOFET components. Photolithographically patterned gold is used for metal electrodes (named gate, source, drain, control source, control drain), the insulators (insulators 1 and 2) are photoimageable polymers (polyvinylphenol), and the organic semiconductor is a solution-processed pentacene. The material thicknesses are detailed in the Supplementary Fig. 1. (c) Photograph of the plastic (PEN) foil with the measured transistors detached from the glass substrate. The transistors are fabricated with an industrial thin-film technology with three metal layers. (d,e) Measured transfer characteristics at several control source voltages. The VCS step is 10 V, VS=0 V and VCD=0 V. The DOFET channel width and length are W=100 μm and L=12.5 μm, respectively. (f) Measured output characteristics at several control drain voltages.
