Figure 4: 2D numerical simulations of a DOFET operating in saturation. | Nature Communications

Figure 4: 2D numerical simulations of a DOFET operating in saturation.

From: Ultra-high gain diffusion-driven organic transistor

Figure 4

The applied voltages are VG=−5.1 V, VS=0 V, VD=−10 V, VCS=−60 V, VCD=−60 V. (a) Charge concentration in the organic semiconductor. (b) Current density: x-component JX (black area) is equal to 1 A cm−2, and the y-component JY is shown with colour scale levels. For the sake of clarity, the positions of control source (CS), control drain (CD) and gate electrodes are shown. Geometrical and physical parameters are listed in the Supplementary Fig. 1.

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