Figure 5: DOFET gain.
Measured gain as a function of VCD. The applied voltages are VG=−5 V, VS=0 V, VCS=−20 V. The transistors width is W=100 μm. The DOFET (full line with symbols) length is L=12.5 μm. The OFET lengths are L=12.5 μm (red dashed line) and L=100 μm (black dashed line). The other geometries are the same. The DOFET and OFET are fabricated with the same materials (Supplementary Fig. 1). The grey area shows the gain obtained in OFETs11,16,17,18,30,31,32,33,34,35.
