Figure 6: 2D numerical simulations of a DOFET with minimized capacitances. | Nature Communications

Figure 6: 2D numerical simulations of a DOFET with minimized capacitances.

From: Ultra-high gain diffusion-driven organic transistor

Figure 6

Current density: x-component JX (black area) is 10 A cm−2, and the y-component JY is shown with colour scale levels. For the sake of clarity, the positions of control source (CS), control drain (CD) and gate electrodes are shown. Geometrical and physical parameters are listed in the Supplementary Fig. 1. The applied voltages are VG=−5.1 V, VS=0 V, VD=−1 V, VCS=−60 V, VCD=−60 V.

Back to article page