Figure 3: Electrical transport in magnetic fields for URu2Si2-xPx.
From: Unfolding the physics of URu2Si2 through silicon to phosphorus substitution
(a) The x=0.006 electrical resistance normalized to the room temperature value R/R300 K versus magnetic field H for several different angles θ. The data were collected at the temperature T=20 mK. The electrical current was applied in the ab-plane and θ=0 is the configuration where, H is parallel (||) the crystallographic c-axis. (b) R/R300 K versus H for x=0.01 at T=20 mK for select θ. (c) R/R300 K versus H at T=20 mK for x=0.02 for select θ. (d) The upper critical field Hc2, defined as the extrapolated zero resistance intercept, for T=20 mK for 0≤x≤0.02. Data for x=0 is from ref. 38. (e) The Kohler scaled electrical resistivity 
versus the reduced field H/R0 for 0≤x≤0.028.
