Figure 4: Gate tuning of Aharonov–Bohm oscillations.
From: Aharonov–Bohm oscillations in Dirac semimetal Cd3As2 nanowires

(a) Gate voltage dependent resistance of a nanowire with diameter ∼65 nm (Device 2) at 1.5 K. (b) A–B oscillations at gate voltages as denoted and at 1.5 K. The positive and negative gate voltages pull the Fermi level into the conduction band and valence band, respectively.