Figure 1: Current–voltage characteristics for a non-ideal transistor and transistor geometry. | Nature Communications

Figure 1: Current–voltage characteristics for a non-ideal transistor and transistor geometry.

From: Mobility overestimation due to gated contacts in organic field-effect transistors

Figure 1

(a) Plot of the transfer characteristics in the saturation regime (VDS=−20 V) of a rubrene transistor exhibiting non-ideal characteristics. Fit lines in red and blue illustrate the ambiguity associated with characterizing OFETs. (b) Bottom gate/bottom contact OFET. (c) Image of transistor. Drain and source contact pairs are 250 × 250 μm squares and the rubrene active area is 140 μm wide × 100 μm long. Scale bar is 100 μm.

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