Figure 3: Prevalence of overestimation of the mobility.
From: Mobility overestimation due to gated contacts in organic field-effect transistors
Our estimates of peak mobility, μpeak, at low gate bias and aggregate mobility, μagg, calculated for higher gate bias using the MOSFET equations applied to hand fits of published data1,3,5,6,7,9,10,11,16. We also include our data from Fig. 1a and the Supplementary Figs (SI) 1b, 1d and 2. Polymers are given by filled symbols and small molecules are given by open symbols. Selected papers show a change from high to low slope in the transconductance data as gate bias is increased in either the saturation or linear regime for p-type conduction. Lines are guides to the eye, and show the ratio of peak to high gate bias values.
