Figure 4: A comparison of mobility estimation results.
From: Mobility overestimation due to gated contacts in organic field-effect transistors
Measured ID versus VDS plots compared with plots calculated from equations (1) and (2) using extracted mobility and Vth obtained from the fitting lines to the measured data in Fig. 1a for the device biased in saturation in the two distinct regions; (a) high gate bias and (b) low gate bias.
