Figure 6: Comparison of contact and channel resistance.
From: Mobility overestimation due to gated contacts in organic field-effect transistors
(a) RC and Rch values extracted from fits to impedance data using equation (3) for reverse (negative to positive VGS) sweep in the linear regime. (b) Plot of the I–V characteristic (blue) for VDS=−0.1 V negative to positive sweep, along with plot of RC/RT and Rch/RT.
