Table 1 Nanowriting capabilities of the heterointerfaces between 3 uc LAO and various STO templates on Si substrates.

From: Creation of a two-dimensional electron gas at an oxide interface on silicon

STO surface termination

SrO termination

TiO 2 termination

Uncontrolled termination

Post-annealing

As-grown

Annealed

As-grown

Annealed

As-grown

Annealed

Nanowriting capabilities

No

No

No

Yes

No

No

  1. Only heterointerface between LAO and post-annealed TiO2-STO/Si exhibited a reversible conductivity switching behaviour of 2DEG nanowire.