Figure 1: Field-effect transistors based on individual perovskite microplate.
From: Size-dependent phase transition in methylammonium lead iodide perovskite microplate crystals
(a) Schematic of the bottom-gate, bottom-contact halide perovskite microplate field-effect transistor fabricated on a 300-nm SiO2/Si substrate with 5 nm Cr/50 nm Au as contact. (b,c) The output (Vg=0, 20, 40, 60, 80 V; from bottom to top; b) and transfer (Vsd=5, 10, 15, 20 V; c) characteristics of a field-effect transistor based on a perovskite crystal microplate at 77 K. The inset of b shows an optical image of a typical device. The channel length is around 8 μm. (d) The temperature-dependent field-effect electron mobility measured with a source-drain voltage of 20 V.
