Figure 2: Switching speed and threshold behaviour.
From: Fast electronic resistance switching involving hidden charge density wave states
(a) Switching resistance ratio measured with a single pulse above threshold IT, each time starting from the HI resistance state (red circles). Black circles show resistivity after current pulse. (b) Erasing with 1-s pulses, each time starting from the LO resistance state (red circles). Black circles show resistivity after applying erase pulse. The data were obtained by alternating write/erase cycles and increasing the pulse length. (c) The circuit used for the 30-ps measurement with an metal–semiconductor–metal (MSM) device as the current source. (d) The voltage V measured during each pulse, first incrementally increasing and then decreasing the pulse current I, shown by paths (1) and (2), respectively. Above the threshold current IT, V abruptly drops between two consecutive current values. (e) Same as in d, but starting from the low resistance state increasing Ipulse along path (1) and then reducing Ipulse along (2). In all cases T=20 K and the pulse length was 10 μs. Scale bar, 2 μm.
