Figure 4: An illustration of carrier trapping and DW formation after carrier injection.
From: Fast electronic resistance switching involving hidden charge density wave states
(a) The injected charges are trapped in the C structure causing the formation of a textured glassy electronic state. The charge density ρ is depleted at the leading edge of the pulse as it travels through the sample. (b) The free energy as a function of CDW wavevector based on the model of Nakanishi and Shiba20. qC and qI are the q-vectors of the undoped commensurate and IC states, respectively. The q-vector in the H state qH is determined by the density of carriers forming the DWs. (c) A depiction of the charge injection at the electrodes in the C state and (d) the band structure after the Mott-to-band state conversion process.
