Figure 5: MR and Hall transport characterization of Sn-BSTS.
From: Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties
(a) The MR and (b) Hall plots, and their dependence on the angle (θ) between H and the current in the sample; all the measurements were performed at 20 mK. A schematic in (a) shows the direction of H in x–z plane with respect to current in sample plane along x. (c,d), ρxx(H, θ) and ρyx(H, θ) versus (μ0H)−1 plots as a function of θ.
