Table 1 Optoelectronic properties of O-IDTBR and EH-IDTBR acceptors.

From: High-efficiency and air-stable P3HT-based polymer solar cells with a new non-fullerene acceptor

 

ɛ (104 M−1 cm−1)*

λmax solution (nm)*

λ max film (nm) †

λ max ann. (nm)

E g opt. (eV) †

EA (eV) §

IP (eV) ||

O-IDTBR

9.9±0.1

650

690

731

1.63±0.1

3.88±0.05

5.51±0.05

EH-IDTBR

10.3±0.1

650

673

675

1.68±0.1

3.90±0.05

5.58±0.05

  1. EA, electron affinity; IP, ionization potential.
  2. Measurements were carried out in:
  3. *CHCl3 solution.
  4. †Thin film spin-coated from 10 mg ml−1 chlorobenzene solution.
  5. Thin film annealed at 130 °C for 10 min.
  6. §Cyclic voltammetry carried out on the as-cast thin film with 0.1 M TBAPF6 electrolyte in acetonitrile.
  7. ||Estimated from the electrochemical EA and the optical Eg.
Back to article page