Figure 4: Effects of hydrazine treatment on conductivity of MoS2 architectures. | Nature Communications

Figure 4: Effects of hydrazine treatment on conductivity of MoS2 architectures.

From: Efficient hydrogen evolution in transition metal dichalcogenides via a simple one-step hydrazine reaction

Figure 4

(a) Four-probe resistance measurement of MoOx/MoS2 core-shell nanowire array, grown on a non-conductive glass substrate, with exposure to ambient air (shown by arrow) to ∼350 Torr. (b) The effects on the four-probe resistance of the MoOx/MoS2 core-shell nanowire array following the introduction of a small amount (∼15 Torr) of hydrazine (N2H4) vapour, leading to an almost instantaneous, and irreversible drop in the system resistance. (c) Resistance measurement of device fabricated on a small cluster of MoOx/MoS2 core-shell nanowires (optical micrograph shown in inset). The resistance of the nanowires decreases from ∼133 to 0.3 MΩ following exposure to hydrazine. (d) Resistance measurement of device fabricated on single CVD grown 2H-MoS2 sheet (optical micrograph shown in inset). The resistance decreases from ∼5.8 to 1.2 MΩ following exposure to hydrazine. (e) Drain current-gate voltage analysis of single CVD grown 2H-MoS2 sheet and (f) following exposure to dilute hydrazine.

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