Table 1 The parameters of SnS2 for the device simulation

From: Thermoelectric materials by using two-dimensional materials with negative correlation between electrical and thermal conductivity

Parameter

Value

Band gap

2.24 eV (ref. 28)

Dielectric constant

9 (ref. 29)

Electron affinity

7.30 eV (ref. 28)

Effective mass of electron

0.545 m0 (ref. 30)

Doping density of SnS2

1012 cm−3

Interface trap density

1012 cm−2

Energy level of interface trap

0.1 eV from cond. band

Electron mobility

22.5 cm2 V−1 s−1 (ref. 31)

Back to article page